Optical bistability in silicon on sapphire thermo-optical seed element

Hongchen Zhai

doi:10.1117/12.2294883

1 July 1990 Optical bistability in silicon on sapphire thermo-optical seed element

Hongchen Zhai

Author Affiliations +

Proceedings Volume 1230, International Conference on Optoelectronic Science and Engineering '90; 12306U (1990) https://doi.org/10.1117/12.2294883
Event: The Marketplace for Industrial Lasers 1990, 1990, Chicago, IL, United States

Abstract

We present optical bistability in silicon on sapphire (SOS) thermooptical SEED structures at a visible wavelength of A = 514nm. Theoretical analysis and experimental results show that bistability is due to increasing absorption and thermally induced change of the internal resistance.

Citation Download Citation

Hongchen Zhai "Optical bistability in silicon on sapphire thermo-optical seed element", Proc. SPIE 1230, International Conference on Optoelectronic Science and Engineering '90, 12306U (1 July 1990); https://doi.org/10.1117/12.2294883

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