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14 March 2023 Fabrication of ultra-low-density InAs quantum dots on InP(311)B substrates for telecom-band single-photon sources (Conference Presentation)
Kouichi Akahane, Kiyora Kaneki, Atsushi Matsumoto, Toshimasa Umezawa, Naokatsu Yamamoto, Tomohiro Maeda, Hideyuki Sotobayashi, Yoriko Tominaga, Atsushi Kanno
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Proceedings Volume 12417, Optical Components and Materials XX; 124170C (2023) https://doi.org/10.1117/12.2648147
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We investigated a growth technique for ultra-low-density self-assembled InAs QDs using Bi surfactant-assisted interdiffusion epitaxy (IDE). The samples were grown using a solid-source molecular beam epitaxy system. InP(311)B substrates were used to grow InAs QDs. After growing the InP buffer layer, a 100 nm-thick InGaAlAs barrier layer and a 1 nm-thick InP were used for the IDE process, and self-assembled InAs QD were formed. The density of QDs was very low, approximately 3.2×107/cm2, which is three orders of magnitude smaller than that of the conventional QD. Moreover, sharp photoluminescence was observed from a single QD at 1522 nm.
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Kouichi Akahane, Kiyora Kaneki, Atsushi Matsumoto, Toshimasa Umezawa, Naokatsu Yamamoto, Tomohiro Maeda, Hideyuki Sotobayashi, Yoriko Tominaga, and Atsushi Kanno "Fabrication of ultra-low-density InAs quantum dots on InP(311)B substrates for telecom-band single-photon sources (Conference Presentation)", Proc. SPIE 12417, Optical Components and Materials XX, 124170C (14 March 2023); https://doi.org/10.1117/12.2648147
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KEYWORDS
Indium arsenide
Quantum dots
Chemical species
Bismuth
Quantum communications
Quantum computing
Optical semiconductors
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