Characterization of soft x-ray damage in charge-coupled devices

Nigel M. Allinson; D. W.E. Allsopp; B. G. Magorrian; J. Alan Quayle

doi:10.1117/12.19439

1 July 1990 Characterization of soft x-ray damage in charge-coupled devices

Nigel M. Allinson, D. W.E. Allsopp, B. G. Magorrian, J. Alan Quayle

Proceedings Volume 1242, Charge-Coupled Devices and Solid State Optical Sensors; (1990) https://doi.org/10.1117/12.19439
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States

Abstract

The paper presents the use of deep level transient spectroscopy to characterize trapping centers in CCD imagers. A discussion is presented regarding the effects of UV illumination and elevated temperature annealing in a hydrogen-rich environment. Two trapping centers are described, and the annealing experiments suggest techniques for extending CCD lifetimes.

Citation Download Citation

Nigel M. Allinson, D. W.E. Allsopp, B. G. Magorrian, and J. Alan Quayle "Characterization of soft x-ray damage in charge-coupled devices", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); https://doi.org/10.1117/12.19439

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