Growth of cubic InxGa1-xN over whole composition by MBE

M. F. Zscherp; S. A. Jentsch; M. J. Müller; M. Littmann; F. Meier; D. M. Hofmann; D. J. As; S. Chatterjee; J. Schörmann

doi:10.1117/12.2648296

15 March 2023 Growth of cubic In_xGa_1-xN over whole composition by MBE

M. F. Zscherp, S. A. Jentsch, M. J. Müller, M. Littmann, F. Meier, D. M. Hofmann, D. J. As, S. Chatterjee, J. Schörmann

Proceedings Volume 12421, Gallium Nitride Materials and Devices XVIII; 124210B (2023) https://doi.org/10.1117/12.2648296
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Cubic In_xGa_1-xN alloys are a candidate material for optoelectronic applications because they lack internal polarization fields and promise to cover a vast range of emission wavelengths. However, the large discrepancy in interatomic spacing and growth temperatures of c-GaN and c-InN hinder In_xGa_1-xN-growth. We report cubic In_xGa_1-xN layers grown by plasmaassisted MBE and achieve continuous miscibility of the indium content x(In) over the whole composition range. X-ray diffraction precisely monitors the composition, phase purity and miscibility of the thin films. Furthermore, we discuss the impact of the indium content on the crystallinity. Complementary, low-temperature photoluminescence studies elucidate the optical response of cubic In_xGa_1-xN layers.

Conference Presentation

Citation Download Citation

M. F. Zscherp, S. A. Jentsch, M. J. Müller, M. Littmann, F. Meier, D. M. Hofmann, D. J. As, S. Chatterjee, and J. Schörmann "Growth of cubic In_xGa_1-xN over whole composition by MBE", Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 124210B (15 March 2023); https://doi.org/10.1117/12.2648296

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