Presentation + Paper
15 March 2023 UV emission from MOVPE nanowire LEDs
Christophe Durand, Vincent Grenier, Sylvain Finot, Lucie Valera, Catherine Bougerol, Joel Eymery, Gwénolé Jacopin
Author Affiliations +
Abstract
The use of nanowires has recently emerged to go further in the development of nitride UV LEDs, especially to improve the efficiency or to make micro-sized UV-sources and flexible LEDs/photodetectors. Our current research interest is focused on the core-shell UV quantum wells grown by industrial MOVPE epitaxy tool. Several types of core-shell quantum wells have been successfully achieved: GaN/InAlN for UV-A, GaN/AlGaN or AlGaN/AlGaN for UV-A and UV-B. When the UV GaN/AlGaN QWs are embedded in a core-shell AlGaN p-n junction, the electroluminescence is demonstrated on single-wire μLEDs in the UV-A and UV-B. The further development of core-shell GaN/AlGaN monolayered system is also shown with demonstration of UV-B emission for single-wire μLEDs.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christophe Durand, Vincent Grenier, Sylvain Finot, Lucie Valera, Catherine Bougerol, Joel Eymery, and Gwénolé Jacopin "UV emission from MOVPE nanowire LEDs", Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 124210M (15 March 2023); https://doi.org/10.1117/12.2651255
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KEYWORDS
Gallium nitride

Ultraviolet radiation

Light emitting diodes

Quantum wells

Nanowires

Electroluminescence

Aluminum gallium nitride

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