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Silicon nitride films with different compositions are exposed to ultraviolet light using both an LED and a laser as light sources (with a wavelength of 244 nm and 265 nm, respectively). Collected data suggests a decrease in refractive index following the exposure, and this can be used for permanently tuning the response of passive photonic devices. The effects of ultraviolet illumination on the material are studied combining observations of the change in the response of the photonic devices and analysis of exposed films.
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Greta De Paoli, Alexander Flint, Thalía Domínguez Bucio, Graham Reed, James Gates, Frederic Gardes, "Effects of ultraviolet exposure on silicon nitride and its application in tuning passive photonic devices," Proc. SPIE 12426, Silicon Photonics XVIII, 124260J (13 March 2023); https://doi.org/10.1117/12.2647364