Presentation + Paper
13 March 2023 Effects of ultraviolet exposure on silicon nitride and its application in tuning passive photonic devices
Greta De Paoli, Alexander Flint, Thalía Domínguez Bucio, Graham Reed, James Gates, Frederic Gardes
Author Affiliations +
Proceedings Volume 12426, Silicon Photonics XVIII; 124260J (2023) https://doi.org/10.1117/12.2647364
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Silicon nitride films with different compositions are exposed to ultraviolet light using both an LED and a laser as light sources (with a wavelength of 244 nm and 265 nm, respectively). Collected data suggests a decrease in refractive index following the exposure, and this can be used for permanently tuning the response of passive photonic devices. The effects of ultraviolet illumination on the material are studied combining observations of the change in the response of the photonic devices and analysis of exposed films.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Greta De Paoli, Alexander Flint, Thalía Domínguez Bucio, Graham Reed, James Gates, and Frederic Gardes "Effects of ultraviolet exposure on silicon nitride and its application in tuning passive photonic devices", Proc. SPIE 12426, Silicon Photonics XVIII, 124260J (13 March 2023); https://doi.org/10.1117/12.2647364
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KEYWORDS
Silicon nitride

Ultraviolet radiation

Refractive index

Light emitting diodes

Photonic devices

Plasma enhanced chemical vapor deposition

Laser sources

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