Development of arsenide- and antimonide-based epitaxial quantum dots for single photon emitter applications

G. Balakrishnan

doi:10.1117/12.2650865

15 March 2023 Development of arsenide- and antimonide-based epitaxial quantum dots for single photon emitter applications

G. Balakrishnan

Author Affiliations +

Proceedings Volume 12430, Quantum Sensing and Nano Electronics and Photonics XIX; 124300M (2023) https://doi.org/10.1117/12.2650865
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

We investigate the possibility of realizing telecommunication wavelength (1.3 – 1.55 μm) single photon emitters based on quantum dots. We take two approaches to fabricate these emitters. The first approach is based on the growth of InAs on InP that results in both quantum dots and dashes. The second approach involves the growth of GaSb on GaAs to realize strained and unstrained quantum dots. The growth mode observed for InAs on InP follows a Stranski-Krastanov (SK) growth mode with a planar phase followed by a three-dimensional growth phase. However, unlike the growth of InAs on GaAs where a wetting layer is initially formed, followed by three-dimensional island growth, InAs on InP (100) results in a much thicker muti-monolayer planar phase followed by a three-dimensional island growth that has a preferential elongation along the (1-10) direction. These quantum dashes however do not show single dot/dash behavior and instead appear to have quantum well like characteristics. To achieve individual quantum dots we grow on (311)B InP substrates which clearly show single dot emission. The GaSb on GaAs system also has the possibility of longer wavelength quantum dots. This material system offers the option of both the coherently strained SK growth mode and also a strain-free island growth mode characterized by the presence of interfacial misfit dislocation arrays at the GaSb/GaAs interface. There is however the issue of band-alignment in the GaSb/GaAs system which is believed to be a type-II configuration. In addition, the capping of the GaSb quantum dots with GaAs also presents some unique challenges due to interdiffusion between the GaSb island and GaAs matrix.

Conference Presentation

Citation Download Citation

G. Balakrishnan "Development of arsenide- and antimonide-based epitaxial quantum dots for single photon emitter applications", Proc. SPIE 12430, Quantum Sensing and Nano Electronics and Photonics XIX, 124300M (15 March 2023); https://doi.org/10.1117/12.2650865

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