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The control of light emission from InGaN quantum wells (QWs) is crucial for improving the performance of LEDs in various applications. Resonant plasmonic nanostructures were demonstrated to affect the properties of coupled emitters significantly. Here, we fabricate Al nanodisks on top of a GaN/sapphire wafer to control the angular far-field emission and enhance the collected light. This far-field photoluminescence (PL) emission is characterized by Fourier-imaging microscopy. Furthermore, we study the relationship between the PL and the pumping laser power, which is required to obtain enhancement in the collected light. The collection enhancement is up to a factor 3.2.
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Mohamed S. Abdelkhalik, Aleksandr Vaskin, Aimi Abass, Toni López, Jaime Gómez Rivas, "Enhanced light emission collection from InGaN quantum wells using plasmonic metasurfaces," Proc. SPIE 12431, Photonic and Phononic Properties of Engineered Nanostructures XIII, 124310H (15 March 2023); https://doi.org/10.1117/12.2654623