Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source

Koh Matsumoto; Kazuki Ohnishi; Hiroshi Amano

doi:10.1117/12.2647336

14 March 2023 Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source

Koh Matsumoto, Kazuki Ohnishi, Hiroshi Amano

Proceedings Volume 12441, Light-Emitting Devices, Materials, and Applications XXVII; 1244104 (2023) https://doi.org/10.1117/12.2647336
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Until recently, lack of stable p-type doping source in HVPE hindered its use to the application of III-nitride light emitting devices. Recently, K. Ohnishi discovered the stable MgO source for p-type doping in GaN HVPE. This has enabled the use of HVPE for light emitting devices as well as electron devices such as vertical MOSFET. In this article, we will review the current HVPE technology of p-GaN HVPE, multi-junction AlInGaP/InGaP/GaAs solar cell, InGaN HVPE by trichlorides, and discuss the challenge and opportunities of III-nitride HVPE in terms of epitaxial layer design and the remaining issues of the growth of the low temperature buffer, MQWs as well as the source supply design to grow multilayer structures.

Conference Presentation

Citation Download Citation

Koh Matsumoto, Kazuki Ohnishi, and Hiroshi Amano "Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source", Proc. SPIE 12441, Light-Emitting Devices, Materials, and Applications XXVII, 1244104 (14 March 2023); https://doi.org/10.1117/12.2647336

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