Surface treatment to reduce process defects

Yuan Hsu; Edison Yang; Mochihiro Shimizu

doi:10.1117/12.2646601

28 April 2023 Surface treatment to reduce process defects

Yuan Hsu, Edison Yang, Mochihiro Shimizu

Proceedings Volume 12494, Optical and EUV Nanolithography XXXVI; 124941A (2023) https://doi.org/10.1117/12.2646601
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Conference Poster

Abstract

The pattern size of semiconductor circuits has been shrinking as technical advances continued. Defect control becomes tighter due to a decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained considerably shrunk circuit and ultra-high density pattern of sub – 20 nm tech devices. In this paper, we introduce two different types of process defects: one of the defects think related to mask blank surface status and the other defect may relate to etching chamber inner surface condition. By the experiment results, we will bring forward the possible defect generation mechanism. Based on this understanding, an appropriate solution by surface treatment methods to mitigate defects will be proposed.

Citation Download Citation

Yuan Hsu, Edison Yang, and Mochihiro Shimizu "Surface treatment to reduce process defects", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124941A (28 April 2023); https://doi.org/10.1117/12.2646601

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available