Poster
30 April 2023 Electron induced chemical transformations in model resist materials
Oleg Kostko, Terry McAfee, Patrick Naulleau
Author Affiliations +
Conference Poster
Abstract
In EUV resists, due to the high energy of the incident photons, most of the radiation chemistry arises from the emitted electrons and not the EUV photons themselves. The absorption of an EUV photon by a resist film leads to the emission of a primary electron, which, through a cascade of inelastic scattering events, causes the excitation of molecules and emission of secondary electrons. Those electrons play a leading role in EUV patterning, initiating chemical transformations. To characterize electron induced chemical transformations in photoresist materials we exposed thin films of model resists to an electron beam and quantified electron induced changes employing FTIR spectroscopy. Combination of polymers with PAG served as model resists. Employed electron energies varied from 20 to 80 eV to study the effect of fast primary electrons as well as slow secondary electrons on photoresists.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg Kostko, Terry McAfee, and Patrick Naulleau "Electron induced chemical transformations in model resist materials", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124981Z (30 April 2023); https://doi.org/10.1117/12.2661596
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KEYWORDS
Extreme ultraviolet

Photons

Photoresist materials

FT-IR spectroscopy

Laser scattering

Molecules

Polymers

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