In EUV resists, due to the high energy of the incident photons, most of the radiation chemistry arises from the emitted electrons and not the EUV photons themselves. The absorption of an EUV photon by a resist film leads to the emission of a primary electron, which, through a cascade of inelastic scattering events, causes the excitation of molecules and emission of secondary electrons. Those electrons play a leading role in EUV patterning, initiating chemical transformations. To characterize electron induced chemical transformations in photoresist materials we exposed thin films of model resists to an electron beam and quantified electron induced changes employing FTIR spectroscopy. Combination of polymers with PAG served as model resists. Employed electron energies varied from 20 to 80 eV to study the effect of fast primary electrons as well as slow secondary electrons on photoresists.
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