Paper
31 January 2023 Long-wavelength infrared PπBN photodetectors based on InAs/GaSb type-II superlattice
Jiang Zhi, Zhou Xu-chang, Li Jun-bin, Wang Hai-peng, Huang You-wen, Li Yan-hui, Yang Chun-zhang, Kong Jin-cheng
Author Affiliations +
Proceedings Volume 12505, Earth and Space: From Infrared to Terahertz (ESIT 2022); 1250507 (2023) https://doi.org/10.1117/12.2664979
Event: Earth and Space: From Infrared to Terahertz (ESIT 2022), 2022, Nantong, China
Abstract
Long-wavelength infrared InAs/GaSb type-II superlattice PπBN photodetectors are demonstrated on GaSb substrates. The focal plane array device consists of a 2.0μm thick absorber layer and has a 50% cutoff wavelength of 11.3μm, and a maximum resistance-area product of 800 Ω•cm2 at 77 K. And the resistance-area product stay above 500 Ω•cm2 at the range from -200 mV to -1100 mV. These single units show good consistency. It has laid a reliable foundation for the manufacturing of focal plane arrays.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiang Zhi, Zhou Xu-chang, Li Jun-bin, Wang Hai-peng, Huang You-wen, Li Yan-hui, Yang Chun-zhang, and Kong Jin-cheng "Long-wavelength infrared PπBN photodetectors based on InAs/GaSb type-II superlattice", Proc. SPIE 12505, Earth and Space: From Infrared to Terahertz (ESIT 2022), 1250507 (31 January 2023); https://doi.org/10.1117/12.2664979
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KEYWORDS
Superlattices

Long wavelength infrared

Gallium antimonide

Photodetectors

Staring arrays

Sensors

Infrared radiation

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