Paper
15 June 2023 Silicon meta-APD integrated with InGaAsP meta-emitter for near-infrared (NIR) for active imaging and LIDAR
Kwong-Kit Choi, Patrick Oduor, Achyut Dutta
Author Affiliations +
Abstract
The detection of Nd: YAG laser emission at 1.064 microns is important for a number of applications such as active infrared imaging and space LIDAR. We propose a silicon avalanche photodiode (APD) based on micro-scaled photonic metastructures. In one approach, the metastructure contains a hexagonal hole array filled with SiO2 to yield optical diffraction and trapping. With 3D electromagnetic modeling, we optimize the array dimensions and yield 26.0% theoretical absorption at 1.064 microns. It is 59 times larger than that of the planar structure with an additional 18% dark current reduction. In another approach, the metastructure contains a ring array fabricated on the top contact layer to excite localized surface plasmons. The theoretical QE is 52 times larger and the dark current is 8.6 times lower. In addition to active imaging and LIDAR, the present meta-APD designs are also useful for broadband passive imaging, in which Ip/Id can be improved by 3.9 and 8.7 times, respectively. The ring metastructure can also be integrated with an InGaAsP light emitting diode to produce coherent, directional emission at 1.064 micron to further improve SWaP in active applications.
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Kwong-Kit Choi, Patrick Oduor, and Achyut Dutta "Silicon meta-APD integrated with InGaAsP meta-emitter for near-infrared (NIR) for active imaging and LIDAR", Proc. SPIE 12514, Image Sensing Technologies: Materials, Devices, Systems, and Applications X, 1251403 (15 June 2023); https://doi.org/10.1117/12.2668001
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KEYWORDS
Quantum efficiency

Silicon

Avalanche photodetectors

Diffraction

Active imaging

Light emitting diodes

Emission wavelengths

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