Paper
15 August 2023 A high order temperature compensated band gap reference source based on depletion mode transistor
Xicong Wang, Hongxiang Li, Changjun He, Mingjiang Wang
Author Affiliations +
Proceedings Volume 12719, Second International Conference on Electronic Information Technology (EIT 2023); 127192C (2023) https://doi.org/10.1117/12.2685520
Event: Second International Conference on Electronic Information Technology (EIT 2023), 2023, Wuhan, China
Abstract
With the iterative upgrade of electronic products, high precision band gap reference source is becoming the core of its development. Temperature compensation technology is the most important to design a high precision band gap reference source. In recent years, new high order temperature compensation technologies have been proposed. For example, segmental compensation technology, curvature compensation technology, and subthreshold compensation technology are common compensation means. In this paper, a new compensation method is proposed which is to generate the compensating current through the self-opening characteristic of the depletion-mode transistors. It can obtain a band gap reference source with high order compensation. The temperature coefficient can be as low as 3.3ppm/°C in the range of -40°C to 85°C.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xicong Wang, Hongxiang Li, Changjun He, and Mingjiang Wang "A high order temperature compensated band gap reference source based on depletion mode transistor", Proc. SPIE 12719, Second International Conference on Electronic Information Technology (EIT 2023), 127192C (15 August 2023); https://doi.org/10.1117/12.2685520
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Transistors

Resistance

Temperature metrology

Capacitance

Design and modelling

Amplifiers

Analog electronics

RELATED CONTENT


Back to Top