Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Yuhui Liu; Su Fu; Yue Liu; Yuzhen Ma; Yanli Liu

doi:10.1117/12.2679628

18 July 2023 Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Yuhui Liu, Su Fu, Yue Liu, Yuzhen Ma, Yanli Liu

Proceedings Volume 12722, Third International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2023); 127222T (2023) https://doi.org/10.1117/12.2679628
Event: International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2023), 2023, Hangzhou, China

Abstract

With the development of high-speed RF circuits and high-voltage switches, the enhancement-mode (E-mode) GaN-based high electron mobility transistors (HEMTs) have become a hot topic in those fields. In this work, to improve the device performance of E-mode HEMT, p-GaN gate combined with recessed-gate was proposed. Moreover, the influence of structure parameters such as Al component and thickness of AlGaN barrier layer and the depth of recessed gate on device performance were investigated systematically by theoretical simulation. The results show that the saturation current increases and threshold voltage decreases with the increasing of Al component and thickness of AlGaN barrier layer. In addition, the saturation current decreases and threshold voltage increases with the increasing of the recessed gate depth. So, to obtain relative larger threshold voltage and saturation current, the Al component and thickness of the AlGaN barrier layer and the recessed gate depth for the p-GaN gate HEMT combined with recessed-gate structure should be moderate.

Citation Download Citation

Yuhui Liu, Su Fu, Yue Liu, Yuzhen Ma, and Yanli Liu "Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure", Proc. SPIE 12722, Third International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2023), 127222T (18 July 2023); https://doi.org/10.1117/12.2679628

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