Large optical nonlinearities in novel semiconductor superlattices

Milan Jaros; Ian Morrison; A. Beavis

doi:10.1117/12.20736

1 October 1990 Large optical nonlinearities in novel semiconductor superlattices

Milan Jaros, Ian Morrison, A. Beavis

Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20736
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The nonlinear response in semiconductors is normally achieved via a band filling mechanism accompanied by strong energy dissipation. An attractive alternative is a virtual process which is based on multi-photon excitations to higher lying levels. We show that in certain superlattices the position of such energy levels and the relevant transition probabilities can be engineered so as to obtain a significant enhancement of nonlinear response. We predict structural parameters for several lattice matched systems where this enhancement should occur and report the first full scale calculation of the frequency dependence of the third order susceptibility.

Citation Download Citation

Milan Jaros, Ian Morrison, and A. Beavis "Large optical nonlinearities in novel semiconductor superlattices", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20736

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