Paper
1 October 1990 Optoelectronic studies of an electrically tunable infrared detector
Kathryn L. Doughty, K. K. Law, Arthur C. Gossard, Joseph L. Maserjian, James L. Merz
Author Affiliations +
Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20745
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Studies are reported of an MBE-grown, two-quantum-well structure which uses photon-assisted resonant tunneling between the two quasi-confined well states to provide a detection current. Bias applied across the device allows for tuning of the wavelength of the detected light by changing the difference in energy of the two states. Various charactrization measurements of this structure will be described, and their ramifications will be discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kathryn L. Doughty, K. K. Law, Arthur C. Gossard, Joseph L. Maserjian, and James L. Merz "Optoelectronic studies of an electrically tunable infrared detector", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20745
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Luminescence

Gallium arsenide

Electrons

Superlattices

Infrared detectors

Physics

Quantum wells

Back to Top