PIN photocurrent studies of monolayer SimGen superlattices

Vincent Paul Arbet-Engels; R. P. Gamani Karunasiri; Kang Lung Wang

doi:10.1117/12.20750

1 October 1990 PIN photocurrent studies of monolayer Si_mGe_n superlattices

Vincent Paul Arbet-Engels, R. P. Gamani Karunasiri, Kang Lung Wang

Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20750
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

PIN diodes whose intrinsic region s composed of a strained monolayer superlattice (SLS) have been fabricated by molecular beam epitaxy. The optical and geometrical properties of these structures as a function of the substrate orientation have been investigated. Transmission Electron Microscopy (TEM) and X-ray spectroscopy have been used to characterize the crystalline quality of the samples. The absorption spectra have been measured using photocurrent spectroscopy. Optical transitions extending well into the silicon bandgap have been observed. The type of the transition has been analyzed using envelope function approximation and curve fitting procedures.

Citation Download Citation

Vincent Paul Arbet-Engels, R. P. Gamani Karunasiri, and Kang Lung Wang "PIN photocurrent studies of monolayer Si_mGe_n superlattices", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20750

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