Temperature dependence of electron beam induced current and cathodoluminescence contrast of dislocations in GaAs

Michael Eckstein; Abram Jakubowicz; Michael Bode; Hanns-Ulrich Habermeier

doi:10.1117/12.20795

1 October 1990 Temperature dependence of electron beam induced current and cathodoluminescence contrast of dislocations in GaAs

Michael Eckstein, Abram Jakubowicz, Michael Bode, Hanns-Ulrich Habermeier

Author Affiliations +

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20795
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Electron Beam Induced Current (EBIC) and Cathodoluminescence (CL) contrast of dislocations in GaAs show a strong temperature dependence. This is not only due to a variation of the recombination properties of the defects, which are a function of the defect energy level in the gap, but also due to the variation of diffusion length with temperature and their absolute value, which depends on doping type and doping concentration of the material. The experimental results are interpreted in the framework of model calculations for defect contrast and indicate a decreasing diffusion length and increasing recombination efficiency of dislocations with decreasing temperature in the range of 20 to 300 K.

Citation Download Citation

Michael Eckstein, Abram Jakubowicz, Michael Bode, and Hanns-Ulrich Habermeier "Temperature dependence of electron beam induced current and cathodoluminescence contrast of dislocations in GaAs", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20795

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