Photoreflectance characterization of delta-doped p-GaAs

Ayrton Andre Bernussi; F. Iikawa; Paulo Motisuke; Pierre Basmaji; M. Siu Li; Oscar Hipolito

doi:10.1117/12.20864

1 August 1990 Photoreflectance characterization of delta-doped p-GaAs

Ayrton Andre Bernussi, F. Iikawa, Paulo Motisuke, Pierre Basmaji, M. Siu Li, Oscar Hipolito

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20864
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Silicon S-doped GaAs samples grown by molecular-beam epitaxy with different dopant concentration and cap layer thickness were investigated by photoreflectance spectroscopy. The features observed above the GaAs fundamental energy gap are temptatively attributed to transitions involving continuous valence band states and quantum- confined states at the conduction band. These interband transition energies are in qualitative agreement with the self -consistent ones calculated taking into account the spreading of dopants.

Citation Download Citation

Ayrton Andre Bernussi, F. Iikawa, Paulo Motisuke, Pierre Basmaji, M. Siu Li, and Oscar Hipolito "Photoreflectance characterization of delta-doped p-GaAs", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20864

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