Presentation + Paper
12 March 2024 Efficient power scaling of broad-area laser diodes from 915 to 1064 nm
Author Affiliations +
Proceedings Volume 12867, High-Power Diode Laser Technology XXII; 128670W (2024) https://doi.org/10.1117/12.3002642
Event: SPIE LASE, 2024, San Francisco, California, United States
Abstract
Our primary goal is to significantly enhance the output power of broad-area Laser Diodes (LDs) for improved cost-effectiveness of laser systems and broaden their applications in various fields. To achieve this, we implemented an epitaxial design with low internal optical loss and high internal efficiency in agreement with our simulations. We present comprehensive results of high-power single-emitter and bar LDs spanning wavelengths from 915 to 1064 nm. To demonstrate power scaling in single emitter LDs, we utilized waveguide widths from 100 to 500 µm, achieving a Continuous-Wave (CW) maximum output power of 74 W at 976 nm under room temperature conditions, limited by the heatsink temperature control. We also build fiber-coupled modules with single-emitters operating at 1.6 kW. Employing the same epitaxial structure in 1-cm wide laser bars, we demonstrated 976 nm laser bars operated at 100 A CW with 113 W output and a high efficiency of 72.9% at room temperature. Additionally, we achieved 500 W room-temperature CW laser bars at 940 nm. For long wavelength designs at 1064 nm, 500 W output was obtained in Quasi-Continuous-Wave (QCW) operating laser bars. Our results represent significant advancements in obtaining high power and efficient LDs across a broad wavelength range and configuration.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guowen Yang, Yuxian Liu, Yuliang Zhao, Yu Lan, Yongming Zhao, Song Tang, Wenjun Wu, Zhonghui Yao, Ying Li, Jiuwen Di, Jixiang Lin, and Abdullah Demir "Efficient power scaling of broad-area laser diodes from 915 to 1064 nm", Proc. SPIE 12867, High-Power Diode Laser Technology XXII, 128670W (12 March 2024); https://doi.org/10.1117/12.3002642
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KEYWORDS
Continuous wave operation

Semiconductor lasers

Laser bars

Design

High power lasers

Quantum emitters

Simulations

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