Paper
1 October 1990 Influence of rapid thermal-annealing parameters on properties of YBaCuO thin films sputtered on silicon-based substrates
Joseph M. Baixeras, Francois Carrie, Ferechteh Hosseini Teherani, Alain J. Kreisler
Author Affiliations +
Proceedings Volume 1287, High Tc Superconductivity: Thin Films and Applications; (1990) https://doi.org/10.1117/12.20897
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
In order to optimize the performances of YBaCuO thin films, elaborated by a two step process on SiO2/SiN4/Si substrates, we have studi&1 the effect of rapid thermal annealing (EA) conditions on low temperature (i.e. < 200°C) sputter&i layers, in the thickness range 0.3 - 1.5 m. Both the superconducting properties and the surface quality of the layers have been investigated. One of the advantages of this process is to allow the use of a very thin nitride layer (i.e. 45 A), to avoid the harmful diffusion of silicon from the wafer. This fast technique is also efficient to prevent interdiffusion between the silica and YBaCuO layers . Our first results show that an onset temperature in the 87-91K range can been obtained, with T(R.o) 60 K and 'c 500 A. Clii (at T(R.o /2) . It is also shown that these figures might be improved by repeated RTA cycles.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph M. Baixeras, Francois Carrie, Ferechteh Hosseini Teherani, and Alain J. Kreisler "Influence of rapid thermal-annealing parameters on properties of YBaCuO thin films sputtered on silicon-based substrates", Proc. SPIE 1287, High Tc Superconductivity: Thin Films and Applications, (1 October 1990); https://doi.org/10.1117/12.20897
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KEYWORDS
Thin films

Superconductors

Silicon

Silicon films

Superconductivity

Annealing

Sputter deposition

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