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Variable angle spectroscopic ellipsometry was used to determine the optical properties of n- and p-type GaAs over a doping range of 4.6×1016 to 9.3×1018 cm-3 and a spectral range of 190 nm to 30 μm. Increased doping concentration was observed to have several distinct effects on the samples’ optical properties: the band edge broadens and shifts to a higher energy; the E1 and (E1 + Δ1) absorption peaks blur together; the E2 absorption peak decreases; sub-bandgap, infrared absorption increases. Additionally, the doping effects are generally stronger for n-type than for p-type GaAs. These findings will help inform future design of optoelectronics.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Charles W. Dickerson, John H. McElearney, Kevin A. Grossklaus, Thomas E. Vandervelde, "Determination of optical constants of n- and p-type GaAs as a function of carrier concentration," Proc. SPIE 12882, Optical Components and Materials XXI, 128820R (8 March 2024); https://doi.org/10.1117/12.2692580