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We investigated the carrier localization effect in μLEDs with low (blue) and high (green) indium composition quantum wells through the intensive analysis of the size-dependent forward bias current and electroluminescence mapping. We have observed a negative surface current and high electroluminescence intensity in random spots in green μLEDs, indicating the existence of a converging current to the deep well. On the other hand, in blue μLEDs, we observed a diverging current towards the mesa sidewall. We experimentally confirmed through EQE and Jmax EQE that the converging current caused by carrier localization in green μLEDs is responsible for the size-immunity properties in green μLEDs.
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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Woo Jin Baek, Juhyuk Park, Hyun Soo Kim, Dae-Myeong Geum, Sang Hyeon Kim, "Carrier localization induced size-immunity behavior of green InGaN/GaN micro-light-emitting diodes," Proc. SPIE 12886, Gallium Nitride Materials and Devices XIX, 128860D (8 March 2024); https://doi.org/10.1117/12.3000616