Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates

Yara Banda; Seong-Ho Cho; Yanqing Jia; Mohamed Ben Hassine; Bambar Davaasuren; Qingxiao Wang; Si-Young Bae; Tien Khee Ng; Boon S. Ooi

doi:10.1117/12.3001597

15 March 2024 Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates

Yara Banda, Seong-Ho Cho, Yanqing Jia, Mohamed Ben Hassine, Bambar Davaasuren, Qingxiao Wang, Si-Young Bae, Tien Khee Ng, Boon S. Ooi

Author Affiliations +

Proceedings Volume 12887, Oxide-based Materials and Devices XV; 1288709 (2024) https://doi.org/10.1117/12.3001597
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

We report on the growth and characterization of κ-Ga₂O₃ films grown at varying temperatures in the range of 450-700 ˚C by mist-CVD. All of the films are single-crystalline and phase-pure except for the two samples grown at 550 ˚C and 600 ˚C, which have (2̅ 01)-oriented β-Ga₂O₃ incorporated in them. Unlike the phase-pure films which exhibit hexagonal-shaped grains, the mixed-phase samples have rough and partially coalesced films with irregular-shaped grains due to the presence of two Ga₂O₃ phases growing along two different crystallographic orientations. Moreover, we found that annealing the κ-Ga₂O₃ films at 700 ˚C in ambient air led to improved crystalline quality and reduced grain size.

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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yara Banda, Seong-Ho Cho, Yanqing Jia, Mohamed Ben Hassine, Bambar Davaasuren, Qingxiao Wang, Si-Young Bae, Tien Khee Ng, and Boon S. Ooi "Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates", Proc. SPIE 12887, Oxide-based Materials and Devices XV, 1288709 (15 March 2024); https://doi.org/10.1117/12.3001597

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