Poster + Paper
13 March 2024 AlN-based anodes for far-UVC field emission device at 225 nm
Author Affiliations +
Conference Poster
Abstract
We report on progress in the realization of Field Emission Devices (FED) with AlN-based anodes emitting in the spectral window of 200-230nm for persistent disinfection of air and surfaces in the presence of humans. Modeling, experimental studies, and trade-offs between sputter deposition and MOVPE grown AlN anode films and GaN/AlN multiple quantum wells (MQW) indicate the feasibility of 1’’-size FED emitting at 225 nm wavelength with 1 mW power, capable to quickly deactivate the SARS-CoV-2 virus.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Pierre Demolon, Jean-François Carlin, Marc-Alexandre Dubois, Arno Hoogerwerf, Nicolas Grandjean, and Dmitri L. Boiko "AlN-based anodes for far-UVC field emission device at 225 nm", Proc. SPIE 12906, Light-Emitting Devices, Materials, and Applications XXVIII, 129060S (13 March 2024); https://doi.org/10.1117/12.3002650
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KEYWORDS
Quantum wells

Anodes

Gallium nitride

Quantum efficiency

Luminescence

Quantum modeling

Sputter deposition

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