Understanding and measuring EUV mask 3D effects

Stuart Sherwin; Matt Hettermann; Dave Houser; Patrick Naulleau

doi:10.1117/12.3012400

10 April 2024 Understanding and measuring EUV mask 3D effects

Stuart Sherwin, Matt Hettermann, Dave Houser, Patrick Naulleau

Proceedings Volume 12953, Optical and EUV Nanolithography XXXVII; 129530F (2024) https://doi.org/10.1117/12.3012400
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

EUV lithography is rapidly being pushed to its resolution limit, where tradeoffs are heightened between resolution, throughput, and stochastics. Mitigation strategies include attenuated phase shift masks (aPSMs) and thinner high-k absorbers. Furthermore, multilayer bandwidth and phase shift may need to be reassessed. All these improvements relate to mask 3D effects (M3D), arising from several causes: First, phase shift vs pitch, which sets the aPSM target phase shift around 1.2pi instead of pi. Second, absorber thickness effects which directly relate to the promise of high-k absorbers. And third, multilayer effects like bandwidth and phase vs angle. We propose to quantify these effects in simulation for different EUV scanner generations (0.33 NA, high-NA, or hyper-NA). Finally, we will propose measuring these effects with the EUV Tech ENK (EUV n/k tool) using actinic scatterometry. The complexity of M3D suggests that new metrics of multilayer and absorber performance beyond reflectivity will need to be considered. Actinic scatterometry provides a promising route to measuring M3D due to its sensitivity to wavelength, angle, and feature size.

Conference Presentation

Citation Download Citation

Stuart Sherwin, Matt Hettermann, Dave Houser, and Patrick Naulleau "Understanding and measuring EUV mask 3D effects", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 129530F (10 April 2024); https://doi.org/10.1117/12.3012400

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