Realization of isolated InGaN/GaN-based Dot-LEDs using electrochemical etching for advancing display

Minji Ko; Soyeon Kim; Keyong Nam Lee; Young Rag Do

doi:10.1117/12.3015972

10 June 2024 Realization of isolated InGaN/GaN-based Dot-LEDs using electrochemical etching for advancing display

Minji Ko, Soyeon Kim, Keyong Nam Lee, Young Rag Do

Proceedings Volume 12991, Nanophotonics X; 129910W (2024) https://doi.org/10.1117/12.3015972
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Conference Poster

Abstract

In this paper, we present an innovative top-down approach for fabricating billions of InGaN/GaN-based dot-Light-Emitting Diodes (LEDs) that eliminate the need for a sacrificial layer. Our method combines Electrochemical Etching (ECE) and sonochemical separation to isolate the dot-LEDs. Key electrochemical parameters are investigated to assess their impact on the nanopore size, separation efficiency, and the dot-LEDs’ emission properties. Higher voltages result in more extensive electrochemical etching of the n-GaN portion. Furthermore, lower vapor pressures, along with higher viscosities and surface tension, enhance the sonochemical separation efficiency of dot-LEDs during the ECE process. Blue electroluminescent devices fabricated using these dot-LEDs achieved an External Quantum Efficiency (EQE) of 7.34% at a forward voltage of 4.2 V, with remarkable luminance efficacy. Although the current generation of blue Au-coated dot-LEDs does not surpass the EQE of existing displays, it marks a significant step in the burgeoning field of dot-LED display technology.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Minji Ko, Soyeon Kim, Keyong Nam Lee, and Young Rag Do "Realization of isolated InGaN/GaN-based Dot-LEDs using electrochemical etching for advancing display", Proc. SPIE 12991, Nanophotonics X, 129910W (10 June 2024); https://doi.org/10.1117/12.3015972

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