Poster + Paper
10 June 2024 Two-photon absorption-based silicon photodetector with topology optimized cavity
Robin Dahiya, Ayman N. Kamel, Rasmus E. Christiansen, Andrey Marchevsky, Ole Hansen, Kresten Yvind
Author Affiliations +
Conference Poster
Abstract
A topologically optimized photonic cavity with an integrated lateral p-i-n structure-based silicon (Si) photodetector has been fabricated. The silicon-based cavity allows for the integration of Photodetectors (PDs) in CMOS technology, bypassing challenges associated with adding other materials. The goal of the topological optimization is to maximize the rate of two-photon absorption in silicon, while maintaining small dimensions. The fabricated device was characterized, obtaining a resonant wavelength at 1543 nm with a Q-factor of 6315 and a responsivity of 0.21 mA/W while maintaining a low dark current.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Robin Dahiya, Ayman N. Kamel, Rasmus E. Christiansen, Andrey Marchevsky, Ole Hansen, and Kresten Yvind "Two-photon absorption-based silicon photodetector with topology optimized cavity", Proc. SPIE 12991, Nanophotonics X, 129911G (10 June 2024); https://doi.org/10.1117/12.3022438
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KEYWORDS
Silicon

Photodetectors

Light absorption

Photocurrent

Dark current

Optical gratings

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