Heat capacity in metal-oxide semiconductor field-effect devices under strong magnetic field

Kamakhya Prasad Ghatak; Ardhendhu Ghoshal; Sankar Bhattacharyya; Manabendra Mondal

doi:10.1117/12.21942

1 March 1990 Heat capacity in metal-oxide semiconductor field-effect devices under strong magnetic field

Kamakhya Prasad Ghatak, Ardhendhu Ghoshal, Sankar Bhattacharyya, Manabendra Mondal

Proceedings Volume 1313, Thermosense XII: An International Conference on Thermal Sensing and Imaging Diagnostic Applications; (1990) https://doi.org/10.1117/12.21942
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

In this paper, an attempt is made for the first time to study the heat capacity in n-channel inversion layers on mercury cadmium telluride under strong magnetic field for the more interesting case which occurs from the consideration of fourth order in effective mass theory and taking into account the interactions of the conduction, light-hole heavy-hole, and split-off bands, respectively. We have formulated the heat capacity without any approximations of strong of weak electric field limits. The heat capacity increses with Crier density and magnetic field in an oscillatory manner. The results in accordance with various models for both the limits have been shown for the purpose of comparison. The well known results for relatively wide gap materials have also been obtained as special oases of our generalized theoretical formulations. It is found that the theoretical predictions are in accordance with fourth order theory and a]so in quantitative agreement with the experimental observations as reported elsewhere.

Citation Download Citation

Kamakhya Prasad Ghatak, Ardhendhu Ghoshal, Sankar Bhattacharyya, and Manabendra Mondal "Heat capacity in metal-oxide semiconductor field-effect devices under strong magnetic field", Proc. SPIE 1313, Thermosense XII: An International Conference on Thermal Sensing and Imaging Diagnostic Applications, (1 March 1990); https://doi.org/10.1117/12.21942

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