High-power antimonide semiconductor laser diodes emitting at 2μm

Zhiyuan Wang; Yi Qu; Yihang Chen; Tianfang Wang; Hongguang Yu; Jianmei Shi; Juntian Cao; Zhengqi Geng; Haoran Wen; Li Li; Heng Zhang; Weiyuan Wang; Yu Zhang; Yingqiang Xu; Haiqiao Ni; Cheng-Ao Yang; Zhichuan Niu; Lei Cheng

doi:10.1117/12.3018294

30 April 2024 High-power antimonide semiconductor laser diodes emitting at 2μm

Zhiyuan Wang, Yi Qu, Yihang Chen, Tianfang Wang, Hongguang Yu, Jianmei Shi, Juntian Cao, Zhengqi Geng, Haoran Wen, Li Li, Heng Zhang, Weiyuan Wang, Yu Zhang, Yingqiang Xu, Haiqiao Ni, Cheng-Ao Yang, Zhichuan Niu, Lei Cheng

Author Affiliations +

Proceedings Volume 13153, Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Technologies in Optical Systems; 131530X (2024) https://doi.org/10.1117/12.3018294
Event: Sixth Conference on Frontiers in Optical Imaging Technology and Applications (FOI2023), 2023, Nanjing, JS, China

Abstract

Antimonide high-power semiconductor laser diodes emitting at 2μm have broad prospects in many fields, such as tunable diode laser absorption spectroscopy. However, power is an important indicator for the application of antimonide semiconductor laser diodes. In this paper, we reported the high-power antimony laser diodes emitting around 2μm achieved in our group. The maximum optical power is 1.001W with injected current 3.04A at working temperature 20℃.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Zhiyuan Wang, Yi Qu, Yihang Chen, Tianfang Wang, Hongguang Yu, Jianmei Shi, Juntian Cao, Zhengqi Geng, Haoran Wen, Li Li, Heng Zhang, Weiyuan Wang, Yu Zhang, Yingqiang Xu, Haiqiao Ni, Cheng-Ao Yang, Zhichuan Niu, and Lei Cheng "High-power antimonide semiconductor laser diodes emitting at 2μm", Proc. SPIE 13153, Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Technologies in Optical Systems, 131530X (30 April 2024); https://doi.org/10.1117/12.3018294

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