Paper
1 October 1990 Laser-assisted etching of ferroelectric ceramics for the reticulation of IR detector arrays
Michael A. Todd, Rex Watton
Author Affiliations +
Proceedings Volume 1320, Infrared Technology and Applications; (1990) https://doi.org/10.1117/12.22316
Event: Eighth International Conference Infrared Technology and Applications, 1990, London, United Kingdom
Abstract
Focal plane arrays using ferroelectric ceramics have shown considerable success for ambient temperature IR imaging. To realise their full potential, however, the arrays must be reticulated, ie. the individual detector elements must be physically separated. In the research reported here, the use of focused argon-ion laser radiation to etch lead-compound ferroelectric ceramics in aqueous KOH is demonstrated. The experimental conditions required to laser-etch the desired structures for detector elements are discussed. Finally, the use of a reflective metal layer as an etch stop is assessed and laser-reticulated elements at 1 00 microns pitch are shown.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael A. Todd and Rex Watton "Laser-assisted etching of ferroelectric ceramics for the reticulation of IR detector arrays", Proc. SPIE 1320, Infrared Technology and Applications, (1 October 1990); https://doi.org/10.1117/12.22316
Lens.org Logo
CITATIONS
Cited by 8 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Ceramics

Semiconducting wafers

Ultraviolet radiation

Sensors

Chemical elements

Metals

RELATED CONTENT

4H-SiC detectors for ultraviolet light monitoring
Proceedings of SPIE (February 27 2015)
High-resolution e-beam repair for nanoimprint templates
Proceedings of SPIE (September 23 2009)
Optical microactuation in piezoceramics
Proceedings of SPIE (July 20 1998)
Development of a staring mosaic module
Proceedings of SPIE (December 17 1979)
Monolithic Lead Salt-Silicon Focal Plane Development
Proceedings of SPIE (November 30 1983)

Back to Top