A dry development process for vertically tailored hybrid multilayer EUV photoresist: chemical vapor development (CVD)

Ji-Hoo Seok; Jiwon Kim; Hyeonseok Ji; Jaehyuk Lee; Kwangsub Yoon; Myung Mo Sung; Jinho Ahn

doi:10.1117/12.3034596

12 November 2024 A dry development process for vertically tailored hybrid multilayer EUV photoresist: chemical vapor development (CVD)

Ji-Hoo Seok, Jiwon Kim, Hyeonseok Ji, Jaehyuk Lee, Kwangsub Yoon, Myung Mo Sung, Jinho Ahn

Author Affiliations +

Proceedings Volume 13215, International Conference on Extreme Ultraviolet Lithography 2024; 1321502 (2024) https://doi.org/10.1117/12.3034596
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

In this study, the development of a dry process for vertically tailored hybrid multilayer EUV photoresists using hexafluoroacetylacetone (HFAA) as a chemical vapor developer is investigated. Unexposed regions of the resist were effectively removed, resulting in well-defined patterns, as confirmed by AFM and XPS analyses. The consistent line thickness was maintained, and high development selectivity was demonstrated. The patterned resist was successfully transferred onto a SiO2 substrate. Future research will be focused on optimizing both the dry development and etching conditions to further enhance the precision and applicability of this technique for next-generation lithography.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Ji-Hoo Seok, Jiwon Kim, Hyeonseok Ji, Jaehyuk Lee, Kwangsub Yoon, Myung Mo Sung, and Jinho Ahn "A dry development process for vertically tailored hybrid multilayer EUV photoresist: chemical vapor development (CVD)", Proc. SPIE 13215, International Conference on Extreme Ultraviolet Lithography 2024, 1321502 (12 November 2024); https://doi.org/10.1117/12.3034596

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