New EUV mask and blanks for DRAM 1a nm and beyond

Hiroshi Hanekawa; Yoshiaki Ikuta; Jongsub Kim; Hyunman Jo; Sangjin Jo; Euisang Park; Sungha Woo; Chanha Park

doi:10.1117/12.3034600

12 November 2024 New EUV mask and blanks for DRAM 1a nm and beyond

Hiroshi Hanekawa, Yoshiaki Ikuta, Jongsub Kim, Hyunman Jo, Sangjin Jo, Euisang Park, Sungha Woo, Chanha Park

Proceedings Volume 13215, International Conference on Extreme Ultraviolet Lithography 2024; 132150E (2024) https://doi.org/10.1117/12.3034600
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

The EUV lithography started to be used for the high-volume manufacturing of the advanced semiconductor devices such as logic 7nm device and DRAM 1a device by using the conventional EUV masks and blanks with Ta absorber. We developed the new EUV masks and blanks suitable for DRAM 1a and beyond. This new EUV masks and blanks that we developed employs the unique absorber material in order to realize the higher EUV scanner throughput than the conventional EUV masks and blanks, which we think one of advantages of the new EUV masks and blanks. On the other hand, this new EUV masks and blanks can use the similar mask fabrication process to the conventional EUV masks and blanks that we have experiences. In this paper, the fundamental properties of this unique absorber material are reported such as the dry etching performance, the durability to the wet cleaning process and the hydrogen durability. The mask pattern fidelity and the EUV scanner performance are also reported in comparison with the conventional EUV mask and blanks to show the advantage of the new EUV mask and blanks.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Hiroshi Hanekawa, Yoshiaki Ikuta, Jongsub Kim, Hyunman Jo, Sangjin Jo, Euisang Park, Sungha Woo, and Chanha Park "New EUV mask and blanks for DRAM 1a nm and beyond", Proc. SPIE 13215, International Conference on Extreme Ultraviolet Lithography 2024, 132150E (12 November 2024); https://doi.org/10.1117/12.3034600

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