Through pitch line width difference minimization by pixel source optimization

Min-Woo Kim; Da-Kyung Yu; Yu-Jin Chae; Hee-Chang Ko; Ji-Won Kang; Michael Yeung; Seung-Woo Son; Hye-Keun Oh

doi:10.1117/12.3037354

20 November 2024 Through pitch line width difference minimization by pixel source optimization

Min-Woo Kim, Da-Kyung Yu, Yu-Jin Chae, Hee-Chang Ko, Ji-Won Kang, Michael Yeung, Seung-Woo Son, Hye-Keun Oh

Author Affiliations +

Proceedings Volume 13216, Photomask Technology 2024; 132162L (2024) https://doi.org/10.1117/12.3037354
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Conference Poster

Abstract

Through the adoption of EUV lithography and an increase in numerical aperture (NA), smaller and more complex patterns can now be achieved through single exposure while significantly enhancing throughput. However, due to the variations in pattern shapes and densities, optical proximity correction (OPC) is required, leading to increased computational costs. This study aims to reduce line width variation on wafers and minimize OPC through source optimization. The process was performed under 0.33NA and 0.55NA conditions with a low-n absorbent material. The target pattern was a line and space pattern, focusing on making the same line width among various pitches. High pattern fidelity could be achieved by optimizing the source, while maintaining sufficient imaging performance.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

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Min-Woo Kim, Da-Kyung Yu, Yu-Jin Chae, Hee-Chang Ko, Ji-Won Kang, Michael Yeung, Seung-Woo Son, and Hye-Keun Oh "Through pitch line width difference minimization by pixel source optimization", Proc. SPIE 13216, Photomask Technology 2024, 132162L (20 November 2024); https://doi.org/10.1117/12.3037354

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