Analysis of scattering field characteristics for particles on coated wafer

Lijuan Zheng; Shuang Xu; Cheng Liao

doi:10.1117/12.3040107

16 August 2024 Analysis of scattering field characteristics for particles on coated wafer

Lijuan Zheng, Shuang Xu, Cheng Liao

Proceedings Volume 13231, 4th International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2024); 132310G (2024) https://doi.org/10.1117/12.3040107
Event: 4th International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2024), 2024, Chongqing, China

Abstract

Since the rapid development of semiconductor industry, the key nodes keep shrinking and defect detection played a vital role in produce yield improvement. The dark filed detection method has been widely used for un-patterned wafer. In this paper, a model is built for calculating and analyzing the scattering field of particles as defect, based on which the measured configuration is optimized, including the incident angle, polarization and scattering collection channels. Simulation shows the measurement accuracy and precision are improved after the measured configuration optimization, and may provide a reference for further defect detection.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Lijuan Zheng, Shuang Xu, and Cheng Liao "Analysis of scattering field characteristics for particles on coated wafer", Proc. SPIE 13231, 4th International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2024), 132310G (16 August 2024); https://doi.org/10.1117/12.3040107

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KEYWORDS

Particles

Scattering

Semiconducting wafers

Mie scattering

Polarization

Light scattering

Rayleigh scattering

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