Paper
1 December 1990 Low-pressure CVD for wide-area diamond film deposition at low temperatures
Akio Hiraki, Hiroshi Kawarada, Jin Wei, Jing Sheng Ma, Junichi Suzuki
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Abstract
We have applied magneto-microwave plasma to be successful for the first time in deposition of diamond at far lower pressure than the conventional high pressure plasma CVD. The important point of the low pressure plasma deposition system is to set the electron cyclotron resonance (ECR) condition (875 G in the case of a 2. 45 GHz microwave) at the deposition area. The high density plasma ( above '' '' /cm3 ) necessary for high quality diamond formation has been obtained by the effective microwave absorption near the magnetic field satisfying the ECR condition. The plasma is quite uniform at the discharge area (160 mm in diameter) and uniform diamond films with high quality have been obtained. From the investigation of diamond formation from 50 Torr to lO2 Torr in the same deposition system it is definite that the lower pressure lowers the formation temperature of diamond to 500C and the effective species for diamond formation are low energy radicals. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akio Hiraki, Hiroshi Kawarada, Jin Wei, Jing Sheng Ma, and Junichi Suzuki "Low-pressure CVD for wide-area diamond film deposition at low temperatures", Proc. SPIE 1325, Diamond Optics III, (1 December 1990); https://doi.org/10.1117/12.22444
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Cited by 2 scholarly publications.
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KEYWORDS
Diamond

Plasma

Microwave radiation

Chemical vapor deposition

Plasma systems

Magnetism

Waveguides

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