Electronic properties of Si-doped nipi structures in GaAs

C. Y. Fong; R. F. Gallup; Jeffrey S. Nelson

doi:10.1117/12.24414

1 March 1991 Electronic properties of Si-doped nipi structures in GaAs

C. Y. Fong, R. F. Gallup, Jeffrey S. Nelson

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24414
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The electronic properties of heavily and orderly Si-doped nipi structures in GaAs are studied theoretically using the abinitio self-consistent pseudopotential method within the local density approximation. Two nipi configurations are considered. Besides investigating the nature of the impurity-related band edge states the xy-planar-averaged local ionic and self-consistent potentials are also analyzed. The screening effect of the host crystal on the doping induced potential is found to be small. The effects of the doping induced electric field and the strain due to dopings are also examined.

Citation Download Citation

C. Y. Fong, R. F. Gallup, and Jeffrey S. Nelson "Electronic properties of Si-doped nipi structures in GaAs", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24414

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