Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100)

Stefan Morley; Thomas Eickhoff; Dietrich R. T. Zahn; W. Richter; D. Woolf; David I. Westwood; R. H. Williams

doi:10.1117/12.24397

1 March 1991 Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100)

Stefan Morley, Thomas Eickhoff, Dietrich R. T. Zahn, W. Richter, D. Woolf, David I. Westwood, R. H. Williams

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24397
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Thin low doped GaAs layers were deposited on Si(100) substrates using molecular beam epitaxy (MBE). The samples were investigated by nondestructive Far Infrared (FIR) Fourier Transform Spectroscopy. A new evaluation method was employed in order to obtain the phonon parameters the layer thicknesses as well as the densities and mobilities of the carriers. This method was successfully applied for layer thicknesses as low as O. lprn and carrier concentrations of about 2 . 1O''6cm3.

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Stefan Morley, Thomas Eickhoff, Dietrich R. T. Zahn, W. Richter, D. Woolf, David I. Westwood, and R. H. Williams "Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100)", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24397

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