Low-substrate temperature molecular beam epitaxy growth and thermal stability of strained InGaAs/GaAs single-quantum-wells

Boris S. Elman; Emil S. Koteles; Paul Melman; Mark A. Rothman

doi:10.1117/12.24407

1 March 1991 Low-substrate temperature molecular beam epitaxy growth and thermal stability of strained InGaAs/GaAs single-quantum-wells

Boris S. Elman, Emil S. Koteles, Paul Melman, Mark A. Rothman

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24407
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

We report on InGaiAs/GaAs single quantum wells grown at low substrate temperatures in a wide range of indium compositions (x) and well thicknesses. Compared with ordinary growth conditions the transition between pseudomorphic and relaxed regions (in the epilayer thickness versus x plane) occurred at higher indium compositions when the growth temperature was lowered. An increase in critical thicknesses for pseudomorphic growth by at least a factor of seven for alloy compositions with less than 40 indium was observed. This was determined by low temperature photoluminescence spectroscopy and transmission electron microscopy measurements. Results of studies on the thermal stability of these quantum wells are also presented.

Citation Download Citation

Boris S. Elman, Emil S. Koteles, Paul Melman, and Mark A. Rothman "Low-substrate temperature molecular beam epitaxy growth and thermal stability of strained InGaAs/GaAs single-quantum-wells", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24407

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