Paper
1 February 1991 Picosecond photocurrent measurements of negative differential velocity in GaAs/AlAs superlattices
Christophe Minot, H. Le Person, Francis Mollot, Jean Francois Palmier
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24548
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Evidence of electron negative differential velocity in GaAs/AlAs superlattices is obtained from time-resolved photocurrent in n-i-n perpendicular photoconductors at 77K. The miniband widths range from 22meV to 78meV. Approximate field-velocity laws are derived using a numerical simulation relying on the drift-diffusion equations. They are interpreted in terms of the Esaki-Tsu model in which the non-linearity results from the non-parabolic miniband dispersion.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christophe Minot, H. Le Person, Francis Mollot, and Jean Francois Palmier "Picosecond photocurrent measurements of negative differential velocity in GaAs/AlAs superlattices", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24548
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Cited by 5 scholarly publications.
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KEYWORDS
Stereolithography

Superlattices

Optoelectronic devices

Physics

Picosecond phenomena

Capacitance

Data modeling

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