Radiation effects on dynamical behavior of LiNbO3 switching devices

Alvin S. Kanofsky; William J. Minford; James E. Watson

doi:10.1117/12.24955

1 February 1991 Radiation effects on dynamical behavior of LiNbO3 switching devices

Alvin S. Kanofsky, William J. Minford, James E. Watson

Proceedings Volume 1374, Integrated Optics and Optoelectronics II; (1991) https://doi.org/10.1117/12.24955
Event: SPIE Microelectronic Interconnect and Integrated Processing Symposium, 1990, San Jose, United States

Abstract

The dynamical properties of LiNbO3 switches were measured as a function of radiation. The devices are titanium indiffused delta beta switches. Measurements of the gamma radiation level using radiation monitors indicate a total dose of less than 100 rad for a 5-min gamma exposure. The dc levels attenuate for the unswitched case, but not to the same degree that the switched signals do. With pulsed beam, a pulsed attenuation of the signal is evident.

Citation Download Citation

Alvin S. Kanofsky, William J. Minford, and James E. Watson "Radiation effects on dynamical behavior of LiNbO3 switching devices", Proc. SPIE 1374, Integrated Optics and Optoelectronics II, (1 February 1991); https://doi.org/10.1117/12.24955

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