High-temperature degradation-free rapid thermal annealing of GaAs and InP

Stephen J. Pearton; Avishay Katz; Michael Geva

doi:10.1117/12.25699

1 April 1991 High-temperature degradation-free rapid thermal annealing of GaAs and InP

Stephen J. Pearton, Avishay Katz, Michael Geva

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25699
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Rapid thermal annealing of GaAs and InP within enclosed SiC-coated graphite susceptors is shown to eliminate slip formation during implant activation treatments and to provide much better protection against surface degradation at the edges of wafers compared to the more conventional proximity method. Two different types of susceptor were investigated-the first type must be charged with As or P prior to the annealing cycles while the second type incorporates small reservoirs into the susceptor which provide a continuous overpressure of the group V species. Degradation-free annealing of patterned metallized wafers is possible using the latter type of susceptor. The activation of Si and Be implants in GaAs by RTA is also discussed.

Citation Download Citation

Stephen J. Pearton, Avishay Katz, and Michael Geva "High-temperature degradation-free rapid thermal annealing of GaAs and InP", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25699

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