Atomic layer growth of zinc oxide and zinc sulphide

Brian W. Sanders; Adrian H. Kitai

doi:10.1117/12.47783

1 April 1991 Atomic layer growth of zinc oxide and zinc sulphide

Brian W. Sanders, Adrian H. Kitai

Proceedings Volume 1398, CAN-AM Eastern '90; (1991) https://doi.org/10.1117/12.47783
Event: CAN-AM Eastern '90: 1st Canadian-American Eastern Regional Conference on Applications of Optical Engineering, 1990, Rochester, NY, United States

Abstract

Zinc oxide and zinc suiphide thin films form electrode and phosphor layers in flat panel electroluminescent displays. Zinc suiphide and transparent conducting zinc oxide films have been deposited using a modified chemical vapour deposition technique which also allows for the preparation of a new mixed (ZnO1 s) host material for phosphor applications. The films have been characterized by optical transmission electron microscopy Rutherford Backscattering Hall measurements and x-ray diffraction. 2.

Citation Download Citation

Brian W. Sanders and Adrian H. Kitai "Atomic layer growth of zinc oxide and zinc sulphide", Proc. SPIE 1398, CAN-AM Eastern '90, (1 April 1991); https://doi.org/10.1117/12.47783

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