Photoemission from quantum-confined structure of nonlinear optical materials

Kamakhya Prasad Ghatak; Ardhendhu Ghoshal; Shambhu Nath Biswas

doi:10.1117/12.43565

1 June 1991 Photoemission from quantum-confined structure of nonlinear optical materials

Kamakhya Prasad Ghatak, Ardhendhu Ghoshal, Shambhu Nath Biswas

Proceedings Volume 1409, Nonlinear Optics II; (1991) https://doi.org/10.1117/12.43565
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

Photoemission from quantum wells, inversion layers, quantum well wires, and quantum dots of nonlinear optical materials has been studied using n-CdGeAs₂ as an example. Photoemission was formulated by deducing the dispersion law within the framework of the k-p formalism taking into account all types of anisotropies of the energy band parameters. Photoemission is found to increase with incident photon energy in a ladderlike manner and to exhibit an oscillatory dependence on changing film thickness, surface fields at both high and weak electric field limits, and the carrier density. It is concluded that the numerical values of the photoemission are the greatest in quantum dots and the smallest in bulk specimens.

Citation Download Citation

Kamakhya Prasad Ghatak, Ardhendhu Ghoshal, and Shambhu Nath Biswas "Photoemission from quantum-confined structure of nonlinear optical materials", Proc. SPIE 1409, Nonlinear Optics II, (1 June 1991); https://doi.org/10.1117/12.43565

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