Argon fluoride excimer laser source for sub-0.25 mm optical lithography

Richard L. Sandstrom

doi:10.1117/12.44819

1 July 1991 Argon fluoride excimer laser source for sub-0.25 mm optical lithography

Richard L. Sandstrom

Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991) https://doi.org/10.1117/12.44819
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

The spectral characteristics of an ELS-4000 excimer laser operating at 193 nm and employing two different line-narrowing schemes have been studied. Partial bandwidth reduction (72 pm FWHM) was achieved using a single dispersive prism. The laser generated an average output power of 4 W, making it a useful source of VUV radiation for broad-band 193 nm lithography. Narrow-band operation (5.5 pm FWHM) was attained using a prism-grating combination. The maximum narrow-band energy was 6 mJ; however, the average power was low (0.6 W). Improvements in the gain generator and optics will be needed to extract higher power levels for narrow-band lithographic applications.

Citation Download Citation

Richard L. Sandstrom "Argon fluoride excimer laser source for sub-0.25 mm optical lithography", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44819

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