Design methodology for dark-field phase-shifted masks

Kenny K.H. Toh; Giang T. Dao; Henry T. Gaw; Andrew R. Neureuther; Larry R. Fredrickson

doi:10.1117/12.44799

1 July 1991 Design methodology for dark-field phase-shifted masks

Kenny K.H. Toh, Giang T. Dao, Henry T. Gaw, Andrew R. Neureuther, Larry R. Fredrickson

Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991) https://doi.org/10.1117/12.44799
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Simulation has been used to systematically investigate the effects of phase-shifters on dark- field patterns (openings in a dark-field mask), and to determine the phase-shifter configurations that are most effective for different mask patterns. This study has resulted in a design methodology based on the distance between the centers of clear features and the surrounding phase-shifters. A key verification is that isolated phase-shifted patterns print best when the distance from the center of the phase-shifter to the center of the feature is approximately 0.7 (lambda) /NA. At this optimal spacing, the peak image intensity, image slope and resist wall-angle of the printed pattern is maximized. Optimally-aligned phase- shifters will also have the best focus-exposure behavior of all the different dark-field phase- shifter configurations. However, dark-field phase-shifters will only provide a resolution increase on the order of 0.05 0.10 (lambda) /NA. Different dark-field mask configurations will print with different amounts of bias; the amount of print bias is dependent on the width of the phase-shifters and the distance between the phase-shifters and the feature. Response curves of resist opening as a function of feature size and phase-shifter/feature separation can be used to keep track of the amount of bias required in a given phase-shifter configuration.

Citation Download Citation

Kenny K.H. Toh, Giang T. Dao, Henry T. Gaw, Andrew R. Neureuther, and Larry R. Fredrickson "Design methodology for dark-field phase-shifted masks", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44799

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