Insertion of emerging GaAs HBT technology in military and communication system applications

Bridget A. McAdam; Arvind K. Sharma; Barry R. Allen; M. Kintis

doi:10.1117/12.44504

1 July 1991 Insertion of emerging GaAs HBT technology in military and communication system applications

Bridget A. McAdam, Arvind K. Sharma, Barry R. Allen, M. Kintis

Proceedings Volume 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems; (1991) https://doi.org/10.1117/12.44504
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

This paper presents design and test results of balanced I-band amplifiers realized using GaAs HBT and MESFET technology. Their performance comparison in terms of linearity figure of merit demonstrates that the HBT MMICs can provide high third-order intercept point (IP3) with low dc power consumption. It also provides simplified system architecture requiring only a single dc supply voltage.

Citation Download Citation

Bridget A. McAdam, Arvind K. Sharma, Barry R. Allen, and M. Kintis "Insertion of emerging GaAs HBT technology in military and communication system applications", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44504

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