Research on influence of substrate to crystal growth by ion beams

Dong Yin; Wen Xuan Guan; Shu Zi Sun; Zhao An Zhang

doi:10.1117/12.47250

1 November 1991 Research on influence of substrate to crystal growth by ion beams

Dong Yin, Wen Xuan Guan, Shu Zi Sun, Zhao An Zhang

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47250
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The change of grain size and structure in several metal films on different substrate by Ar⁺ bombarding has been shown. The experimental results show that the size of film grain will become bigger and even form single crystal under special bombarding conditions. It is also found that some factors of substrate, such as lattice structure, lattice parameter, and deposited surface, etc., have a great influence upon its growth. A new mechanism of crystal growth has been investigated.

Citation Download Citation

Dong Yin, Wen Xuan Guan, Shu Zi Sun, and Zhao An Zhang "Research on influence of substrate to crystal growth by ion beams", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47250

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available