Photoelectrochemical characteristics of slurry-coated CdSeTe films

K. R. Murali; V. Subramanian; N. Rangarajan; A. S. Lakshmanan; S. K. Rangarajan

doi:10.1117/12.49230

1 December 1991 Photoelectrochemical characteristics of slurry-coated CdSeTe films

K. R. Murali, V. Subramanian, N. Rangarajan, A. S. Lakshmanan, S. K. Rangarajan

Proceedings Volume 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X; (1991) https://doi.org/10.1117/12.49230
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Studies on slurry painted CdSe_xTe_1-x photoactive films prepared from CdSe and CdTe synthesized by a low temperature wet process are reported. The films on Ti sub- strates, heat treated at 550°C in argon were polycrystalline with the bandgap increasing and room temperature conductivity decreasing with the x value. In poly- sulphide electrolyte, the films with a composition CdSe_0.5Te_0.5 gave a V_oc of 425 mV, J_sc of 8.5 mA cm^-2, FF of 0.54 and η of 3.25% at an illumination of 60 mW cm^-2.

Citation Download Citation

K. R. Murali, V. Subramanian, N. Rangarajan, A. S. Lakshmanan, and S. K. Rangarajan "Photoelectrochemical characteristics of slurry-coated CdSeTe films", Proc. SPIE 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X, (1 December 1991); https://doi.org/10.1117/12.49230

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